Supply forms
Available configurations
- Doped or undoped
- Semi-insulating
- Single-side or double-side polished
- Epi-ready surface
Request a Quote Wafers & Substrates
Gallium Arsenide Wafer
GaAsSingle-crystal gallium arsenide wafers configured by diameter, orientation, doping, resistivity and surface finish.
RFQ specification
Information to provide
- Diameter
- Crystal orientation and offcut
- Thickness
- Doping and resistivity
- Surface finish
- Quantity and packaging
Applications
Typical use areas
- RF and microwave devices
- Photonics
- Solar cells
- Infrared devices
- III–V epitaxy research
Technical definition
Parameters used to define this product.
These are specification fields, not fixed stock values. The offered values are confirmed against your RFQ.
CrystalSingle-crystal GaAs
Electrical optionsUndoped, doped or semi-insulating, subject to specification
Surface optionsSSP or DSP; epi-ready finish where required
Critical controlsDiameter, orientation/offcut, thickness, dopant and resistivity
Order definition
What is confirmed with your quotation.
Material specification
Purity, composition, grade, dimensions, tolerances and requested form.
Production configuration
Bonding, backing, surface finish, packaging or other product-specific options.
Documentation
Analysis documentation and any additional agreed dimensional or assembly records.
Commercial supply
Quantity, lead time, DAP or EXW delivery and the applicable quotation validity.
Values and forms shown are representative. Adesis confirms the commercially offered specification in the quotation and order documents.
Technical inquiry
Specify your gallium arsenide wafer requirement.
Send the material, purity, dimensions, quantity and application. We will review the complete specification before quoting.