Wafers


Silicon Wafes

Silicon Wafers

  • Grade: Prime grade, Test grade
  • Dopant: Undoped, Boron-doped/P-type, Phos-doped/N-type
  • Orientation: <100>, <111>, <211>, <110> or off-angle
  • Size: 2-inch, 3-inch, 4-inch, 6-inch, 8-inch, 12-inch, 10x10mm or others
  • Thickness: 0.28mm, 0.38mm, 0.5mm, 0.625mm, 0.725mm, 1.0mm or others
  • Resistivity: >10000, >1000, 1~100, 1~20, 0.01~0.09, <0.005 ohm-cm
Thermal Oxide Silicon Wafe

Thermal Oxide Silicon Wafer (SiO2 + Si)

  • Oxidation: Single-side oxidation, Double-side oxidation
  • Oxide-layer: 25nm, 50nm, 100nm, 300nm, 500nm, 1um, 2um, 3um
  • Orientation: <100>, <111>
  • Size: 2-inch, 3-inch, 4-inch, 6-inch, 8-inch or 10x10mm
  • Resistivity: >10000, >1000, 1~100, 1~20, 0.01~0.09, <0.005 ohm-cm
SOI Wafer

SOI Wafer

  • Device layer: 50nm, 220nm, 340nm, 2um, 3um, 8um, 15um, 30um, 80um
  • Box layer: 500nm, 1um, 2um, 3um
  • Size: 4-inch, 6-inch, 8-inch
  • Resistivity: 1~20 ohm-cm, 1~100 ohm-cm, 0.001~0.005 ohm-cm, >1000 ohm-cm
Germanium Wafer

Germanium Wafer

  • Dopant: Undoped, Sb-doped/N-type, Ga-doped/P-type
  • Orientation: <100>, <110>, <111>, <100> 6° off, <100> 9° off,
  • Size: 2-inch, 4-inch, 6-inch, 10x10mm or others
  • Thickness: 0.17 mm, 0.5 mm, 0.65mm or others
  • Resistivity: >35, 1~15, <1, <0.1 ohm-cm
GaAs Wafer

Gallium Arsenide (GaAs) Wafer

  • Dopant: Undoped, Si-doped/N-type, Zn-doped/P-type
  • Orientation: <100>, <100> 2° off, <100> 15° off,
  • Size: 2-inch, 3-inch, 4-inch, 6-inch, 10x10mm or others
  • Thickness: 0.35 mm, 0.65 mm, 0.5mm
GaP Wafer

Gallium Phosphate (GaP) Wafer

  • Dopant: Undoped/N-type, S-doped/N-type, Zn-doped/ P-type,
  • Orientation: <111> or <100> or <110>
  • Size: 2-inch, 10x10mm or others
  • Thickness: 0.28 mm, 0.5 mm
GaSb Wafer

Galyum Antimonide (GaSb) Wafer

  • Dopant: Undoped/P-type, Te-doped/ N-type, Zn-doped/ P-type
  • Orientation: <100> or <111>
  • Size: 2-inch, 3-inch, 4-inch, 10x10mm or others
  • Thickness: 0.35 mm, 0.65 mm
InP Wafer

Indium Phosphate (InP) Wafer

  • Dopant: Undoped/N-type, Fe-doped/Semi-insulating, S-doped/N-type, Zn-doped/P-type
  • Orientation: <100> or <111>
  • Size: 2-inch, 3-inch, 4-inch, 10x10mm or others
  • Thickness: 0.35 mm, 0.6mm, 0.625 mm
InAs Wafer

Indium Arsenide (InAs) Wafer

  • Dopant: Undoped/N-type, S-doped/N-type, Zn-doped/P-type
  • Orientation: <100> or <111>
  • Size: 2-inch, 3-inch, 4-inch, 10x10mm or others
  • Thickness: 0.35 mm, 0.65 mm
Sic Wafer

4H-SiC Wafer

  • Grade: Production grade, Research grade, Dummy grade
  • Dopant: N-type or Semi-insulating or Undoped
  • Orientation: <0001> or <0001> with 4° off,
  • Size: 2-inch, 4-inch, 6-inch, 10x10mm or others
  • Resistivity: 0.015~0.028 ohm-cm, >1E5 ohm-cm, >1E7 ohm-cm
GaN Wafer

Gallium Nitride (GaN) Wafer

  • Grade: Production, Research, Dummy grade
  • Orientation: <0001>, <11-20>, <1-100>, <20-21>
  • Dopant: Undoped/N-type, Si-doped/N-type, Mg-doped/P-type, Fe-doped/SI-type
  • Size: 2-inch, 4-inch, 15x10mm, 5x5mm or others